Nonproliferation and National Security Seminar
"Material problems and crystal growth of (Cd,Zn)Te"
Presented by Prof. Peter Rudolph, Crystal Technology Consulting (CTC), Germany
Tuesday, June 18, 2013, 1:30 pm
Hamilton Seminar Room, Bldg. 555
An overview of the material parameters of CdTe and (Cd,Zn)Te bulk crystals and their importance will be given. One of the targets is the specific behaviour of II-VI melts showing high ionicity and, thus, a tendency to structure, which affects the crystal quality markedly. After discussion of the crystal growth methods, especially THM, the next area of focus will be non-stoichiometry related growth defects, such as second-phase inclusions and precipitations affecting the detector response by carrier trapping. Near stoichiometric growth conditions, intrinsic/extrinsic point defect situation and annealing efficiency will be demonstrated. Finally, crystal twinning will be discussed.