Sustainable Energy Technologies Seminar
"Nature of the abrupt phase transition in ultrathin vanadium dioxide"
Presented by Dr. Louis Piper, Physics, Applied Physics & Astronomy, Binghamton University, State University of New York
Friday, September 27, 2013, 1 pm
ISB 734 2nd Floor Seminar Room 201
Data centers already accounted for 1.3% of the world's power consumption in 2010. The need to significantly reduce the power consumption of the transistors and memory devices has sparked interest in metal oxides that display abrupt phase transitions, such as an abrupt metal insulator transition (MIT). These new devices will take advantage of the non-linear IV characteristics associated with the MIT. Vanadium dioxide is considered a promising material with Nakano et al. having recently demonstrated a phase triggered Mott field effect transistor (Mott-FET) using VO2 as the active layer. In addition, the complex interplay between the structural phase transition accompanying the MIT provides opportunities to modify the transition further. Here, I will report our recent synchrotron spectroscopy studies of high quality ultrathin films (i.e. < 10 nm) that display abrupt phase transitions. I will show our results of measuring the electronic structure through the MIT for films as thin as 2 nm for different strain orientations.