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BSA 12-15: Reactive Ion Etching of Monolayer and Multilayer Materials
BNL Reference Number: BSA 12-15
Patent Status: PCT filed on February 10, 2012
Summary
The invention describes a novel etching process that can be used to etch monolayer and multilayer structures made from a variety of materials such as tungsten and tungsten silicides. The etched materials can be potentially used in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics.
Description
The invention describes a reactive ion etching processes for sectioning by etching of monolayer and multilayer materials. The process is based on a combination of fluorine, oxygen and other halogen gases.
Benefits
Unlike other etching process currently in market these are single step processes that do not require the intervening passivation step. The process allow high anisotropy, adequate sidewall roughness control and high etching rates of both monolayer and multilayer structures made from a variety of materials. In addition, the process can be carried out at room temperature.
Applications and Industries
The process is useful for thin multilayer reflective geometry for soft x-ray grading and etching thin monolayers to produce zone plates. The process is also useful for semi-conductor applications. In addition, the process can be utilized for the fabrication of multilayer materials, such as a multilayer laue lens, waveguides, hard x-ray zone plates and gratings.
Have Questions?
For more information about this technology, contact Poornima Upadhya, (631) 344-4711.
Tags: optics
