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BSA 12-15: Reactive Ion Etching of Monolayer and Multilayer Materials
BNL Reference Number: BSA 12-15
Patent Status: PCT filed on February 10, 2012
Summary
SEM cross-section micrograph of etched multilayers
The invention describes a novel etching process that can be used to etch monolayer and multilayer structures made from a variety of materials such as tungsten and tungsten silicides. The etched materials can be potentially used in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive X-ray optics.
Description
The invention describes a reactive ion etching processes for sectioning by etching of monolayer and multilayer materials. The process is based on use of a combination of fluorine, oxygen and other halogen gases. The silicide-based or organo-metallic monolayer that can be etched are WSi2, VSi2, MoSi2, Si, Mo, Ni, Al2O3 , or W. The silicide-based or organo-metallic multilayer that can be etched include WSi2/Si, W/Si, W/B4C, W/C, Mo/Si, MoSi2/Si, Mo/B4C, Ni/B4C, Al2O3/B4C, VSi2/Si.
Benefits
Unlike other currently used etching processes this invention describes a single step process that does not require any intervening passivation step. The process provides for high anisotropy, adequate sidewall roughness control and high etching rates of both monolayer and multilayer structures made from a variety of materials. In addition, the process can be carried out at room temperature.
Applications and Industries
The process is useful for thin multilayer reflective geometry for soft X-ray grading and etching thin monolayers to produce zone plates. The process is also useful for semi-conductor applications. In addition, the process can be utilized for the fabrication of multilayer materials, such as a multilayer laue lens, waveguides, hard X-ray zone plates and gratings.
Have Questions?
For more information about this technology, contact Poornima Upadhya, (631) 344-4711.
Tags: optics
