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Categories: advanced materials, electronics & instrumentation

BNL 12-08: Method of Controlling Zinc Segregation and Distribution in CdZnTe Material

BNL Reference Number: BNL 12-08

Summary

CdZnTe (CZT) and CdMnTe (CMT) materials come into the spotlight for room-temperature semiconductor detectors. Both materials have limitations for the production of economical, uniform, and large-volume devices due to the zinc (Zn) segregation in CZT and manganese purity for CMT growth. The effective segregation coefficient of Zn in the CdTe host is nearly 1.3, so about 5-6% of Zn deviation has been reported in Bridgman-grown CZT (Zn=10%) ingots. Such Zn non-uniformity limits the ingot cutting parallel to the crystal growth direction for producing large-volume CZT detectors due to the signal non-uniformity that would be generated by the band-gap variations. However, our recent research shows that the Zn segregation can be controlled by the specific thermal environment.

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For more information about this technology, contact Kimberley Elcess, (631) 344-4151.