Wednesday, December 16, 2009, 11:00 am — Bldg 735, Conference Room A
In this work, intrinsic and extrinsic sources of scattering in SWNTs were examined by heating SWNT field effect transistors in UHV with while monitoring changes in the devices' resistance, transconductance, and conductance fluctuations. It was found that metal-SWNT contact interfaces are the primary scatterers in devices as fabricated, but the contact resistance can be greatly reduced to a limit that depends on the surface chemistry of the electrode metal and the geometry of the interface. Secondary sources of scattering include surface adsorbates on the electrodes and substrate and phonons. Adsorbates are the primary source of resistance noise, followed by the substrate oxide. Heating devices in UHV was found to reduce the contact resistance, noise, and device to device inhomogeneity.
Hosted by: Peter Sutter
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