Wednesday, November 15, 2017, 2:30 pm — Large Conference Room, Bldg. 535
The pair creation energy, w, and Fano factor of silicon were measured using CCD250 and 55Fe X-rays. The measurements were performed at the sensor temperature of 185K. The measured pair creation energy is w = 3.65 +/- 0.009 eV at Mn K_alpha and the Fano factor at this energy is F=0.129 +/- 0.001.
We will show that our measurements agree with theory and will be described in detail. The system gain was obtained from flat field exposures using properties of Poisson distribution. The details of our measurement procedure will be presented.
12588 | INT/EXT | Events Calendar
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