Thursday, March 7, 2019, 4:00 pm — Bldg 735, CFN, Seminar Room 2nd Floor
Atomic layer deposition (ALD), typically utilized for coating ultrathin conformal inorganic films for semiconductor device processing, is fundamentally enabled by the reaction specificity between vapor-phase organometallic precursors and chemical groups available on the substrate surface. The infiltration synthesis (IS), a recently developed ALD-derived method, expands the concept by driving precursors into the matrix of organic polymer substrates to form embedded inorganic molecules. This not only generates organic-inorganic hybrids with new materials functionalities but also provides non-conventional nanopatterning routes for inorganic nanostructures that can be directly integrated into electronic devices. In this talk, I will discuss our recent efforts of applying IS for developing organic-inorganic hybrids and semiconductor nanostructures with unique properties and enhanced device functionalities, such as hybrid nanopillars with the highest capacity to store/release elastic mechanical energy among engineering materials and wafer-scale-integrated, in-plane-aligned ZnO nanowire array phototransistors with ultrahigh UV sensitivity and usual superlinear photoconductivity. Also highlighted is the generation of metal oxide nanopatterns by combining IS with self-assembled block copolymer and lithographically patterned polymer templates, revealing important roles of selective interaction of organometallic precursors and chemical groups in the organic matrix on enabling IS. I will conclude the talk by briefly mentioning other potential applications of IS on improving energy and nanotechnologies, such as gas separation membranes, hybrid gravimetric vapor sensors, and next-generation lithography.
Hosted by: Kevin Yager
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