Friday, March 1, 2019, 12:00 pm — NSLS-II Bldg. 743 Room 156
In this talk, I will introduce the electronic structure of Cr-doped Bi2Se3 / pristine Bi2Se3 heterostructure grown by molecular beam epitaxial method. We realized that such heterostructure provides sharper electronic states in angle resolved photoemission experiments. This promotes a new strategy to study the impact of impurities on the surface states of topological insulators. Furthermore, I will show that the apparent gap at the Dirac point of topological insulators in the non-magnetic state is indeed formed by the resonant states. We confirm this by performing the first principle band structure calculation and angle resolved photoemission spectroscopy with on and off-resonant photon energies.
Hosted by: Ignace Jarrige
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