Monday, August 17, 2020, 1:30 pm — Online at https://bluejeans.com/330620394/4182?src
The performance of superconducting microwave devices often is limited by two-level systems losses that occur at milli-Kelvin temperatures and single-photon powers. These losses are known to exist in dielectric layers and are concentrated at the superconductor–dielectric and superconductor–air interfaces. Understanding and reducing the concentration of interfacial defects in these structures can improve the performance of many devices, including low-loss coplanar, microstrip, and stripline microwave resonators used in next-generation cryogenic communication, sensor, and quantum information technologies and layers used in device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. In this talk we discuss and demonstrate resonators on deposited germanium (a-Ge) and ultra-high purity silicon (Si) with losses in the 10-6 range, comparable to state-of-the-art resonators on Si and orders of magnitude better than most deposited dielectrics.
Hosted by: Adolfy Hoise
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