Friday, November 1, 2024, 10:00 am — Bldg. 735, Seminar Room, 2nd Floor
As the microelectronics industry continues to expand, manufacturing techniques have evolved to produce engineered features at the 10 nm scale. To drive miniaturization even further, researchers are actively exploring bottom-up approaches alongside the traditional top-down photolithography methods that have dominated for decades. In this presentation, I will discuss two facile strategies for creating hybrid nanostructures using atomic layer deposition (ALD)-based techniques: (1) molecular layer deposition (MLD) and (2) vapor-phase infiltration (VPI), and delve into their applications in top-down and bottom-up lithography, respectively. Specifically, the talk will cover hybrid thin films synthesized via MLD as potential resists for extreme ultraviolet lithography (EUVL), and the fabrication of three-dimensional inorganic nanostructures using VPI within self-assembled block copolymer (BCP) patterns. EUVL, the most advanced top-down nanopatterning technique, demands new organic-inorganic hybrid photoresists that can overcome the limitations of conventional organic-polymer-based chemically amplified resists (CARs). We investigated a hybrid thin film synthesized by MLD using trimethyl aluminum (TMA) and hydroquinone (HQ) precursors as a negative-tone, dry EUV photoresist. On the other hand, self-assembled block copolymers (BCPs) are promising for bottom-up, low-cost lithography of functional nanoarchitectures. BCP thin films can be directly converted into inorganic replicas by VPI—an organic-inorganic hybridization method derived from atomic layer deposition (ALD)—which can selectively infiltrate target inorganic materials into one of the polymer blocks in the vapor phase. The presentation will demonstrate nanofabrication results obtained through these strategies, and future plans.
Hosted by: Chang-Yong Nam
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