Condensed-Matter Physics & Materials Science Seminar

"Nanometer-Scale Self Assembly in Semiconductor Microelectronics"

Presented by Charles Black, IBM T. J. Watson Research Center

Monday, January 23, 2006, 11:00 am — Hamilton Seminar Room, Bldg. 555

ABSTRACT
The challenge of defining semiconductor integrated circuit elements at sub-100 nanometer dimensions has created opportunities for alternative patterning approaches. One attractive non-traditional approach utilizes the phenomenon of self assembly, which can be loosely defined as the spontaneous organization of materials into regular patterns. Under suitable conditions, certain materials self organize into patterns offering promise for enabling further advances in semiconductor microelectronics.
Diblock copolymers are particularly suited for this application because like photoresist materials used for lithography they can act as sacrificial templates for patterning integrated circuit elements. We have successfully integrated a polymer self assembly process into our 200mm semiconductor fabrication facility. Self assembly has applications in both today's and future microelectronics, and materials integration is the critical first step for adoption into high-performance semiconductor technology.
I will discuss my efforts to demonstrate key applications of self assembly in high-performance semiconductor device fabrication, including its use in on-chip decoupling capacitors, nanocrystal FLASH memories, and multi-nanowire field-effect transistors. My discussion of self assembly will highlight both the promise and versatility of this technique for applications to technology, as well as some limitations and challenges still to be addressed.


Hosted by: Jim Misewich

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