Thursday, May 25, 2006, 1:30 pm — Small Seminar Room, Bldg. 510
The stoichiometric parent compounds of the copper oxide high-Tc superconductors are antiferromagnetic Mott insulators. Superconductivity arises after a sufficient amount of carriers is injected into the system by chemical doping. We review recent experimental (STM and ARPES) and theoretical developments in understanding the dopant induced nanoscale electronic disorder and quasiparticle interference patterns in superconducting Bi2Sr2CaCu2O8+x. We show that doped Mott insulators are inherently inhomogeneous and can account for the essential phenomenology observed, once the dopant environment and the electrostatic potential are taken into account. The unconventional nonlinear screening of the dopant potential in a doped Mott insulator leads to atomic scale variations in the local doping concentrations that are anticorrelated with the local d-wave pairing energy gap. Based on the t-J model of doped Mott insulators, we provide a consistent microscopic explanation of the correlation between the observed dopant location and the pairing gap and its spatial evolution. We found that off-plane oxygen dopants are the primary cause of both the pairing gap disorder and the quasiparticle interference modulations.
Hosted by: Wei Ku
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