Friday, December 7, 2007, 9:30 am — Bldg. 735 - Conf. Rm. B
The extraordinary electronic properties of single-walled carbon nanotubes (SWNTs) motivate their integration with silicon-based logic and memory technology. To support such efforts, a room-temperature ultrahigh vacuum (UHV) scanning tunneling microscope (STM) was used for the imaging, electrical characterization, and manipulation of SWNTs adsorbed onto Si(100).
Dry contact transfer (DCT) enables the pristine deposition of isolated SWNTs in UHV [1]. The atomic-scale cleanliness of the resulting interface permits the controlled manipulation of SWNTs using the STM tip [2]. Moreover, we can tune the electronic band alignments between SWNTs and hydrogen-passivated Si(100) according to the substrate doping polarity [3]. Nanoscale desorption of hydrogen at the SWNT/Si(100) interface locally enhances the nanotube-surface coupling [4], and can promote the registration of the SWNT lattice to the underlying Si dimer rows [5].
Finally, first-principles calculations of the SWNT/Si(100) system [6] will be drawn upon in the interpretation of our experimental results.
[1] P. M. Albrecht and J. W. Lyding, Appl. Phys. Lett. 83, 5029 (2003).
[2] P. M. Albrecht and J. W. Lyding, Small 3, 146 (2007).
[3] P. M. Albrecht, S. Barraza-Lopez, and J. W. Lyding, Nanotechnology 18, 095204 (2007).
[4] P. M. Albrecht and J. W. Lyding, Nanotechnology 18, 125302 (2007).
[5] P. M. Albrecht and J. W. Lyding, Small 3, 1402 (2007).
[6] S. Barraza-Lopez, P. M. Albrecht, N. A. Romero, and K. Hess, J. Appl. Phys. 100, 124304 (2006).
Hosted by: Eli Sutter
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