Friday, October 24, 2008, 11:00 am — Small Seminar Room, Bldg. 510
Since it was discovered around 2002 that InN is a narrow gap semiconductor, with a band-gap of 0.65 eV (as opposed to the previously believed value of 1.9 eV), interest in this material and its related III-nitride alloys has increased rapidly. Apart from the requirement to re-assess the fundamental properties of this material, the energy gap between GaN (3.4 eV) and InN (0.65 eV) means that InGaN alloys across the entire composition range now map directly onto the visible region of the solar spectrum leading to the possibility of new designs for high efficiency solar cells. One intriguing property of InN is that it has an extremely high accumulation of electrons observed at its free surfaces. This is in contrast to most III-V materials which tend to deplete of electrons in the near surface region. Explaining the origin and quantized nature of this unusual property of InN will form the basis of this presentation.
Hosted by: Peter D. Johnson
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