Monday, December 8, 2008, 10:00 am — NSLS-II Seminar Room, Bldg. 817
Epitaxial growth of metals on semiconductors is of significant interest for both fundamental and technological reasons. Recently, nickel-rich NiAl alloys have been employed as model materials for high-temperature shape-memory alloys. Additionally, NiAl films have been extensively used as under-layers for Co longitudinal recording media. In this talk, the sputter deposition at ambient temperature of epitaxial NiAl thin films and their x-ray study using Buerger precession camera and conventional XRD will be discussed. Furthermore, grazing incidence diffraction (GID) experiments using bright synchrotron radiation which allowed a depth characterization of the different crystalline structures of the Ni63.2Al 36.8/Cu/Si system will be presented. Also to be explained, the substrate influence on the film crystallinity and on the martensitic transformation in Ni63.2Al 36.8 film. Finally, structural models of the growth of NiAl films will be introduced.
Hosted by: Qun Shen
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