Wednesday, January 14, 2009, 3:00 pm — NSLS-II, Lg. Conf. Room (Bldg. 703)
Surface and interface roughness evolution in sputtered WSi2 films and WSi2/Si multilayers has been investigated by real-time GISAXS, X-ray scattering and X-ray reflection. The characterizations confirm that the surface and interface structures of sputtered films are strongly dependent on Ar sputtering gas pressure. The WSi2 surface can be changed from rough to ultra-smooth by reducing the Ar pressure. And alternately smooth and rough interface structures have been found to be formed in WSi2/Si multilayers. The enhanced energetic particles bombardment on the growing surface at low Ar sputtering pressure may be responsible for the observed structures.
Hosted by: Nathalie Bouet
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