Wednesday, April 8, 2009, 10:00 am — Bldg. 735 - Conf Rm B
The success or failure of modern microelectronic devices depends on defects at the one-nanometer scale and below in devices 10 - 40nm in size. Scanning transmission electron microscopes (STEM) offer sub-nanometer lateral resolution for imaging and analysis but only produce a two-dimensional projection through the thickness of a TEM specimen. Electron tomography restores the lost information in the projection direction from a tilt-series of STEM projection images to yield a quantitative reconstruction of the original structure with 1 - 2nm resolution.
We apply this technique to investigate nanoscale features inside semiconductor devices in situations that test tomography's limitations. We quantitatively reconstructed ultra-thick cross-sections 250 - 500nm thick to determine the precise size and location of buried defects while efficiently sampling possible device variations contained within the sample thickness. Furthermore, we reconstructed pores as small as one-nanometer in a low-κ dielectric and extracted statistics on pore-size distributions that match more indirect measurements. Direct measurements from three-dimensional reconstructions provide accurate predictions of microelectronic device performance and reliability.
Hosted by: Yimei Zhu
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