Monday, May 4, 2009, 10:00 am — NSLS-II Seminar Room, Bldg. 817
The rapid development of nanotechnology has brought us tremendous challenges. For example, nanoscale fabrication and metrology are the two key challenges in nanotechnology. Synchrotron radiation is able to provide enriched spectrum and is a very powerful tool for nanotechnology research. This presentation covers three main topics. First of all, x-ray interferometry (XRI) was applied for subnanometer measurement using Si(220) (lattice space 0.192nm) as a basic ruler, and nanostructure dimension was measured precisely by combining XRI and STM (Scanning Tunneling Microscope). Next topic is about nanofabrication using synchrotron radiation, including EUV interference lithography for high resolution patterning and x-ray lithography for high aspect ratio pattern fabrication as well as the applications in MEMS and BioMEMS. Finally, I will give a brief discussion about the current challenges in the development for 45nm/32nm node technology in semiconductor industry.
Hosted by: Qun Shen
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