Thursday, May 21, 2009, 10:00 am — Bldg. 735 - Conf Rm B
Electron beam lithography has represented the most effective way to pattern materials at the nanoscale for almost four decades. The success of e-beam lithography depends on multiple factors such as electron optics, the interaction between the beam of electrons and a polymer-based pattern material (resist), and the interaction between the developer solution and the exposed resist that determines the final topographical result. At the Center for Nanoscale Materials at Argonne we have access to two electron beam lithography tools: a Raith 150 ebeam tool that operates at 30 KV and a JEOL 9300 ebeam tool that operates at 100KV. We have desmontrated improved spatial resolution and contrast achievable with electron beam lithography by cold [1] for resists that are exposed by polymer chain scission. Others results [2, 3] show that similar effect happens with crosslinked resist in opposite manner. Both share the common dissolution mechanism of molecular weight based dissolution.
We will discuss details on how these results are achieved and some of the projects we do at the nanocenter that require such high resolution nanofabrication.
References
1. L. E. Ocola, J. Vac. Sci. Technol, B 24, 3061 (2006)
2. M. Haffner, A. Haug, A. Heeren, M. Fleischer, H. Peisert, T. Chasse, D. P. Kern, EIPBN 2007 proceedings, to be published.
3. S. S. Choi Choi, N. Jin, V. Kumar, M. Shannon, and I. , N. Jin, V. Kumar, M. Shannon, and I. Adesida, EIPBN 2007 proceedings, to be published.
Hosted by: Fernando Camino
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