Thursday, October 22, 2009, 11:00 am — Bldg. 735 Conf Rm B
Spin transport electronics offers additional functionality to overcome some physical limitations of conventional electronics. The spin field effect transistor suggested by Datta and Das in 1990, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. The special feature of the spin field effect transistor is the modulation of source-drain conductance controlled by gate voltage induced spin precession. We demonstrate a spin injected field effect transistor in a high mobility InAs quantum well channel, with the electrical transport of ballistic spin polarized electrons empirically calibrated. An oscillatory channel conductance, as a function of gate voltage, is detected and fit to theory.
[1] H.C. Koo, J.H. Kwon, J. Eom, J. Chang, S.H. Han, M. Johnson, Science 325, 1515 (2009)
Hosted by: Chang-Yong Nam
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