Friday, November 20, 2009, 10:00 am — CFN, Bldg 735, Conference Room B
Fundamental aspects of ZnO nanowire growth as well as optical and electrical properties of doped and undoped ZnO nanowires will be present.
A selection mechanism is proposed defining whether the Au particle remains on the substrate at the root of the nanowire serving as an initial template for wire nucleation or is lifted up from the substrate, catalyzing wire growth at the tip. Surface diffusion of Au atoms and ZnO admolecules limit the position-controlled growth of ZnO nanowires and affect anisotropic ZnO nanowire growth having a diameter-dependent growth rate. Surface exciton recombination as well as on-state current flow along a channel of field effect transistors can be tuned by introducing dopant atoms or through modulating of point defect density in ZnO nanowires.
In addition, reactivity and stability of ZnO nanowires covered with solid (or vapor) phase metal oxide material upon annealing or ultraviolet photon irradiation are closely examined.
Hosted by: Peter Sutter
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