Tuesday, November 10, 2009, 1:30 pm — Small Seminar Room, Bldg. 510
Combinatorial molecular beam epitaxy (MBE) technique has been used to grow Si/Ge based magnetic epitaxial films. Full ternary structural and magnetic phase diagrams of CoxMnyGe1-x-y have be demonstrated. Novel room temperature ferromagnetic semiconductors have been discovered and Lattice compensation can stabilize epitaxial growth and suppress phase separation at higher doping levels. Varies techniques for synthesizing and characterizing the films will be discussed in detail, including combinatorial MBE for growth, in-situ RHEED and ex-situ X-ray diffraction for structural properties, magneto-optic Kerr effect (MOKE) measurements and SQUID magnetometry for magnetic properties and magnetotransport measurement for electronics properties.
Hosted by: Ivan Bozovic
5924 | INT/EXT | Events Calendar
Not all computers/devices will add this event to your calendar automatically.
A calendar event file named "calendar.ics" will be placed in your downloads location. Depending on how your device/computer is configured, you may have to locate this file and double click on it to add the event to your calendar.
Event dates, times, and locations are subject to change. Event details will not be updated automatically once you add this event to your own calendar. Check the Lab's Events Calendar to ensure that you have the latest event information.