Condensed-Matter Physics & Materials Science Seminar

"Combinatorial MBE Synthesis and Characterization of Si/Ge-based Magnetic Epitaxial Films"

Presented by Liang He, University of North Carolina at Chapel Hill

Tuesday, November 10, 2009, 1:30 pm — Small Seminar Room, Bldg. 510

Combinatorial molecular beam epitaxy (MBE) technique has been used to grow Si/Ge based magnetic epitaxial films. Full ternary structural and magnetic phase diagrams of CoxMnyGe1-x-y have be demonstrated. Novel room temperature ferromagnetic semiconductors have been discovered and Lattice compensation can stabilize epitaxial growth and suppress phase separation at higher doping levels. Varies techniques for synthesizing and characterizing the films will be discussed in detail, including combinatorial MBE for growth, in-situ RHEED and ex-situ X-ray diffraction for structural properties, magneto-optic Kerr effect (MOKE) measurements and SQUID magnetometry for magnetic properties and magnetotransport measurement for electronics properties.

Hosted by: Ivan Bozovic

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