Thursday, January 21, 2010, 11:00 am — Bldg 735, Conference Room A
Semiconductor nanowires (NWs) represent an important class of nanoscale building blocks with substantial potential for exploring new device concepts and materials for nanoelectronics and optoelectronics applications. Three examples will be presented. First, I will discuss the synthesis of crystalline silicon/amorphous silicon (Si/a-Si) core/shell NWs and studies of crossed Si/a-Si NW/metal NW (Si/a-Si/M) devices and arrays for high performance nonvolatile crossbar switches. Then I will report the first experimental realization of single coaxial group III-nitride nanowire photovoltaic (PV) devices, n-GaN/i-InxGa1-xN/p-GaN, where variation of indium mole fraction is used to control the active layer band gap and hence light absorption. Lastly, I will briefly touch on our most recent results on vapor phase universal epitaxial growth of compound semiconductor nanowire arrays which might find broad applications in nanoelectronics and optoelectronics.
Hosted by: Peter Sutter
6093 | INT/EXT | Events Calendar
Not all computers/devices will add this event to your calendar automatically.
A calendar event file named "calendar.ics" will be placed in your downloads location. Depending on how your device/computer is configured, you may have to locate this file and double click on it to add the event to your calendar.
Event dates, times, and locations are subject to change. Event details will not be updated automatically once you add this event to your own calendar. Check the Lab's Events Calendar to ensure that you have the latest event information.