Friday, December 3, 2010, 11:00 am — Bldg 735, CFN Conference Room B
Nanowires represent model systems for studying a variety of low dimensional phenomena as well as building blocks for the future generation of nanoscale devices. The most exploited nanowire growth technique is the vapor-liquid-solid (VLS) method, which very often employs gold as a seed for the growth.
We present the method for growing GaAs nanowires by MBE without using gold as a catalyst. Along these lines, we will show how Molecular beam epitaxy offers a unique possibility for obtaining high purity and high quality materials. Additionally, it gives a great flexibility for the fabrication of many types of nanowire heterostructures. We will present here how radial and axial heterostructures can be obtained and how this combination can be beneficial for application in third generation solar cell designs. The optical and transport properties will be elucidated by means of luminescence, Raman spectroscopy and microscopy experiments realized on the same single nanowire.
Finally, the results are then applied to the realization of nanowire-based solar cells. The future of this research area will be briefly discussed.
Hosted by: Peter and Eli Sutter
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