National Synchrotron Light Source Lunch Time Seminar

"Diboride Thin Films: Growth, Structure, and Surface"

Presented by Yukiko Yamada-Takamura, Japan Advanced Institute of Science and Technology (JAIST), Japan

Friday, December 3, 2010, 12:00 pm — Seminar Room, Bldg. 725

Metal diborides, which have a simple crystal structure consisting of alternating hexagonal close-packed metal layers and honeycomb boron layers, have superior hardness and high melting temperature, together with high electrical and thermal conductivities. In the form of thin films, they could be integrated with other materials more easily, and become even more attractive. For example, zirconium diboride (ZrB2), which has a very good lattice matching to a wide-gap semiconductor, GaN, has a lot to offer in the form of epitaxial thin film: buffer layer, light reflector, heat-resistant electrode, etc. Here, I will present our recent results on the hetero-epitaxial growth of highly pure ZrB2 thin films using ultrahigh vacuum chemical vapor epitaxy method. Their surface structure and electronic properties were studied using scanning tunneling microscopy and angle-resolved ultraviolet photoelectron spectroscopy, and the similarities and differences between epitaxial thin film and single crystal will be discussed.

Hosted by: Jurek Sadowski

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