Center for Functional Nanomaterials Seminar

Wurtzite GaN is a promising wide bandgap semiconductor for electronic, optoelectronic and spintronic applications. We study heteroepitaxial layers/films of iron and iron nitride on wurtzite GaN by molecular beam epitaxy and/or scanning tunneling microscopy. Scanning tunneling microscopy allows us to study heteroepitaxial structures down to atomic scale. Therefore, we investigate the initial phase of sub-monolayer iron deposition on wurtzite GaN by using scanning tunneling microscopy. We observe novel iron-induced surface structures on atomically smooth wurtzite GaN surface.
I will also present the development of a novel N-plasma assisted molecular beam epitaxy and cryogenic superconducting magnet scanning tunneling microscopy system in a completely new lab. The molecular beam epitaxy growth system supports up to eight sources to grow a variety of materials, such as nitride semiconductors and magnetic materials. STM head has a modular design, consisting of an upper body and a lower body. Such modular design has the advantage of conveniently adapting the microscope to different applications and chamber systems in the future. Sample/tip handling system is designed and optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system.