Tuesday, September 27, 2011, 11:00 am — Bldg. 480 conference room
A continuing challenge in the study of graphene remains fabrication of ultra-high mobility devices so that electronic behaviour in this novel material can be studied in the clean limit. In my talk I will discuss our recent experimental advancement in fabricating very-high quality graphene devices on boron nitride. Magnetoresistance measurements under large applied fields will be presented including our observation of the fractional quantum Hall effect in multi-terminal devices over a broad range of carrier densities. Symmetry breaking and evidence for spontaneous quantum Hall ferromagnetism in the degenerate integer quantum Hall states, in both single and bilayer graphene, will be presented. Finally, I will review our ongoing effort to study correlated electron behaviour in multi-layered graphene/BN heterostructures.
Hosted by: Ivan Bozovic
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