Monday, October 10, 2011, 12:00 pm — Bldg. 480 conference room
Complex oxides are known for a rich diversity of tunable intriguing phases due to strong couplings among multiple degrees of freedom of d electrons. Recent advances in epitaxial growth with atomic-scale precision have opened new possibilities to stabilize unusual phases in heterostructures. Understanding strongly correlated electron behavior and particularly the Mott transition in the ultrathin limit becomes critical for the fundamental science and functional engineering at the interfaces. To this end, we investigated the potent control of heteroepitaxy on the eg1 system based on perovskite rare earth nickelates, a prototypical complex oxide family. Electrical transport measurement and resonant x-ray spectroscopy were utilized to elucidate the collective orderings and electronic structure of nickelate-heterostructures grown by pulsed laser deposition. The results show that epitaxial strain introduces a highly asymmetrical response, while quntum confinement modulates the metal-insulator transition with controlled interfacial covalency.
Hosted by: Ivan Bozovic
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