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Measurement of dE/dx in Phobos silicon detectors at the BNL AGS

The primary aim of the tests is to precisely determine the energy loss dE/dx in silicon detectors.

In this test we measured the energy loss for pions and kaons in 300um thick silicon pad detectors in a momentum range of 100MeV/c to 9GeV/c.

General Information:

Analysis Information

 

Analysis Results

  • NEW Results: Measurement of energy loss and comparison to GEANT for pions in the momentum range from 0.5 to 8GeV/c (C. Vale's presentation at the Phobos collaboration meeting as pdf or ps) covering:

    a precise measurement of the logarithmic rise of dE/dx in thin silicon

    a detail comparision of the dE/dx measurements with Geant predictions and Bethe-Bloch calculation

First full reconstruction of real data! This is Event #924 from Testbeam 98. The rawdata went through the zero suppression, was calibrated and mapped to the geometry of Module Type 1. All signal were  processed in Phat, which constructed hits and reconstructed a first track.

rthbetb.gif (21950 bytes)

This event was fully reconstructed using the Signal Processing Frame Work for silicon detector in PHAT.

A first brief documentation for algorithms and classes used in PHAT for the signal processing is at the Phobos PHAT page

 

Test Beam 97

Test Beam 96

This section is maintained by Heinz Pernegger