Optics & Metrology Group, National Synchrotron Light Source II
Brookhaven National Laboratory
National Synchrotron Light Source II
Bldg. 703, Room 15
P.O. Box 5000
Upton, NY 11973-5000
Research interests focus on the development of x-ray optics and optical components through thin-film deposition and microfabrication techniques.
Responsible for NSLS-II R&D fabrication and metrology activities related to the development of Multilayer Laue Lenses (MLLs)
- Thin film deposition: sputtering, reactive sputtering, molecular beam epitaxy (thermal evaporation and electron beam evaporation)
- Microfabrication: deposition, lithography, etching, reactive ion etching, focused ion beam
- Materials characterization: X-ray reflectometry, scanning electron microscopy, step-height profilometry, white light interferometry...
- Fabrication of state-of-the art multilayer based x-ray optics called Multilayer Laue Lenses (MLLs) producing world-leading nanofocused x-ray beam.
2006 - Ph.D in Physics, University of Orleans (France)
2002 - Master degree in Materials Sciences, University of Tours (France)
2000 - Bachelor degree in Chemistry, University of Tours (France)
2008 - Present National Synchrotron Light Source II (NSLS-II) in Brookhaven National Laboratory (BNL)
2006 - 2008 Research assistant,Physics Department, Boston University
2019 BNL Engineering award for the development of Multilayer Laue lenses nanofocusing X-ray optics.
2016 R&D 100 award for the development of Hard X-Ray Scanning Microscope with Multilayer Laue Lens Nanofocusing Optics. Collaboration with Argonne National Laboratory, NSLS-II Nanoprobe beamline and Optics and Metrology group nanopositioning team. Co-developer.
2016 Microscopy Today Innovation award for the development of a Hard X-ray Scanning microscope providing high throughput 20nm imaging. Co-developer.
2015 R&D 100 award for the development of a binary pseudo-random calibration tool in collaboration with researchers from Lawrence Berkeley and Argonne National Laboratories and Abeam Technologies, Inc. The technology solves one of the most difficult problems in surface profile and imaging metrology: the quantitative characterization of the measuring instruments. Co-developer.
2010 BNL Engineering award for having developed a new engineering procedure to achieve a world-leading etching depth on multilayer semiconductor structures using a reactive ion etching technique.