Technologies Available for License

2021-011: Tunable Organic-Inorganic Hybrid RRAM with Reduced Stochastic Variation for Next-Generation Computing

Invention: 2021-011

Patent Status: Application Number US 2023/0006133 A1 was published on January 5, 2023

For technical and licensing related questions, email tcp@bnl.gov.

Summary

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Scheme: Illustration of the process flow for generating AlOx-infiltrated hybrid SU-8 RRAM media. a) Spin-coating of a 30 nm-thick SU-8Ag layer. b) The first half cycle of VPI for infiltrating TMA molecules in the SU-8Ag layer. c) The next half cycle of VPI infiltrating water molecules into the TMA-infiltrated SU-8Ag layer to generate a molecular network of AlOx imbedded in the SU-8Ag. d) Potential binding reactions available between infiltrated AlOx and SU-8 matrix, including reactions with epoxy (1), ether (2), and residual cyclopentanone (solvent) molecule (3).

In traditional Resistive random-access memory (RRAM) technologies, tuning the switching properties and reducing stochastic variations in performance are difficult. These stochastic variations often result in unreliable switching voltages and inconsistent data storage, limiting the widespread adoption of RRAM in non-von Neumann computing and next-generation storage solutions. To overcome these issues BNL and Stony Brook University researchers providing a new organic-inorganic hybrid RRAM device, leveraging AlOx-infiltrated SU-8 using vapor-phase infiltration (VPI), a method derived from atomic layer deposition.

Description

This RRAM device features a unique hybrid base layer composed of an organic thin film mixed with AgClO4 salt (e.g., SU-8:AgClO4 matrix). The layer is infiltrated with inorganic metal oxide molecules (e.g., AlOx) through vapor-phase infiltration technique (Scheme). The device's resistive switching properties are finely tuned by adjusting the concentration of AgClO4 in the base layer, while the infiltration of metal oxide molecules further refines switching consistency. These modifications allow for precise control over memory cell performance, improving both reliability and scalability.

Journal Publication & Intellectual Property

• US 2023/0006133 A1 (.pdf)
• Reduced Stochastic Resistive Switching in Organic- Inorganic Hybrid Memristors by Vapor-Phase Infiltration (.pdf)