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Oxide Molecular Beam Epitaxy Group

Research

  • U.S. Secretary of Energy Samuel W. Bodman (right) and U.S. Under Secretary of Science Raymond L. Orbach (middle) visiting the MBE lab, 2 June 2006. Left: Ivan Bozovic. Back row: BNL Director Sam Aronson (right) and Chemistry Department Chair Alex Harris (left).

  • U.S. Undersecretary of Science at the Department of Energy Dr. Steven Koonin (right) visiting the MBE lab, 24 Nov 2009. Left: Ivan Bozovic.

The goal of our research is to address some key open questions in HTS physics:

  • What is the dimensionality of the HTS phenomenon?
  • What are the spin and charge of free carriers?
  • What is the nature of the superconducting transition?
  • What is the role of charge stripes (if any) in the HTS state?
  • What is the nature of the overdoped metallic state – a Fermi liquid?
  • What is the ‘glue’ (the bosons) responsible for electron pairing?
  • What is the mechanism of the Giant Proximity Effect (GPE)?

Our approach to this goal is to:

  • utilize Molecular Beam Epitaxy (MBE) synthesis to fabricate atomically smooth HTS thin films, multilayers, superlattices, and combinatorial libraries;
  • manufacture various HTS devices and nano-structures, and
  • study the transport and other physical properties in
    • SIN, SIS, and SNS HTS junctions;
    • HTS nanolayers, nanowires, nanorings and nanodots; and
    • combinatorial libraries of overdoped HTS films (in the quest for purported Quantum Critical Points).