NSLS Seminar Room, Brookhaven National Laboratory
Quantitative understanding of the internal stresses/strain field distribution is fundamental in the design engineering of static and cyclic load-bearing components. The residual stress and strain distribution is difficult to experimentally characterize and is thus often recognized only a posteriori after failure. There has been a gaping hole in the spatial-scale/resolution routinely accessible, by direct or nondestructive methods of strain-field profiling.
The potential of using deeply penetrating high energy (20-250 keV) x-ray scattering to bridge this gap in strain profiling has been recognized for a number of years. The high count rates from small diffraction volumes available using energy dispersive x-ray diffraction (EDXRD) has made it one of the successful new techniques for high-resolution strain field mapping. The initial results of the strain mapping experiments at the NSLS X17B1 beamline have shown that this technique has wide ranging implications in fracture mechanics, fatigue prediction, and FEA model optimization.
To get just a flavor for selected materials science that can be addressed using high spatial resolution, high energy x-ray strain mapping see the following:
Bringing together key members of the synchrotron community and experts in engineering materials science, the interdisciplinary workshop will discuss and explore the current and potential applications of high-energy x-ray strain mapping to engineering problems, and catalyze new interactions between these fields.
The work shop will assess the user base for the present X17 end station configuration, identify potential funding sources, and determine the viability of additional dedicated experimental hutch space on the X17 beamline. The work shop invitees will be asked to propose potential experiments that define what apparatus and conditions would be conducive to their research. We will also discuss the direction of future strain mapping research and it's potential use at the proposed NSLS-II.