Equipment Catalog

The Plasmalab 100 (Oxford F) uses an inductively coupled plasma (ICP) source for etching silicon and dielectric materials using fluorine chemistry. The system has been upgraded with Cobra® ICP plasma source and a separate RF generator driving substrate DC bias which allows for superior control of radicals and ions during the plasma processing. The system has demonstrated the capability to etch vertical walls in silicon to a depth of 300 µm at etch rates of 3 µm / min with an aspect ratio (width of feature to etch depth) of 50:1.