Working at CFN
- Arrival & Departure
- Reports & Publications
- Acknowledging Use of CFN Facilities
- Data Management
- The Guide to Brookhaven
- Operations Plan
- Experimental Safety Reviews (ESR)
- COSA Training
- Hours of Operation
- Laser System Qualification
- Transport of Hazardous Materials
- Vendor Registration (PDF)
- News & Events
Storing Electronic Data in Nanostructured Hybrids
April 27, 2022
Conductive filament formation in a hybrid organic-inorganic memory device, with promise for neuromorphic computing.
What is the Scientific Achievement?
CFN scientists created a hybrid, organic-inorganic polymer and integrated it into a memory device, showing the ability to tune device switching voltage, off-state current, and stochastic variation by controlling the amount of infiltrated inorganic material.
What is the Significance and Impact?
This work demonstrates control of device switching parameters and reduced stochastic switching, which are critical technology issues for resistive random-access memory (RRAM). These devices show promise as multi-level memories, which are essential elements in neuromorphic computing.
- The CFN Electron Microscopy, Nanofabrication, and Materials Synthesis & Characterization Facilities were used in this study.
- The hybrid material was created by vapor-phase infiltration of alumina into silver-doped SU-8 — a conventional photoresist.
Resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing systems, such as neuromorphic computer. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, the work led by scientists at Center for Functional Nanomaterials of Brookhaven National Laboratory demonstrated new organic-inorganic hybrid RRAM media, wherein switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex-situ hybridization technique derived from atomic layer deposition (ALD). Hybrid RRAMs based on alumina-infiltrated SU-8, a conventional photoresist, feature facile tunability of device switching voltages and off-state currents, as well as a significant reduction in their stochastic variation, all by adjusting the amount of infiltrated alumina in the hybrid. Finally, multi-level analog switching potentially useful for neuromorphic applications is demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. The results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.
Subramanian, N. Tiwale, K. Kisslinger, C.-Y. Nam, "Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration." Advanced Electronic Materials 8, 7 (2022).
Journal Cover: https://doi.org/10.1002/aelm.202270035
Acknowledgment of Support
This research used Materials Synthesis and Characterization, and Electron Microscopy Facilities of the Center for Functional Nanomaterials (CFN), which is a U.S. Department of Energy Office of Science User Facility, at Brookhaven National Laboratory under Contract No. DE-SC0012704.
2022-20808 | INT/EXT | Newsroom